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| ADVANCE INFORMATION MICRONAS HAL700 Dual Hall-Effect Sensor with Independent Outputs Edition Feb. 20, 2001 6251-477-1AI MICRONAS HAL700 Contents Page 3 3 3 4 4 4 4 4 5 6 6 6 6 7 7 8 9 9 9 9 10 10 10 10 10 10 12 Section 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. 3.7.1. 3.7.2. 3.7.3. 4. 4.1. 4.2. 4.2.1. 4.3. 4.4. 5. Title Introduction Features Applications Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability Functional Description Specifications Outline Dimensions Dimensions of Sensitive Areas Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Magnetic Threshold Matching of BS1 and BS2 Hysteresis Matching Application Notes Ambient Temperature Extended Operating Conditions Supply voltage below 3.8 V Start-up Behavior EMC and ESD Data Sheet History ADVANCE INFORMATION 2 Micronas ADVANCE INFORMATION HAL700 1.1. Features - two independent Hall-switches Dual Hall-Effect Sensor with Independent Outputs 1. Introduction The HAL 700 is a monolithic CMOS Hall-effect sensor consisting of two independent latched switches (see Fig. 3-3) with closely matched magnetic characteristics controlling two independent open-drain outputs. The Hall plates of the two switches are spaced 2.35 mm apart. In combination with an active target providing a sequence of alternating magnetic north and south poles, the sensor forms a system generating the signals required to control position, speed, and direction of the target movement. The device includes temperature compensation and active offset compensation to provide excellent stability and matching of the switching points in the presence of mechanical stress over the whole temperature- and supply voltage range. This is required by systems which determine the direction by comparing two transducer signals. The sensor is designed for industrial and automotive applications and operates with supply voltages from 3.8 V to 24 V in the ambient temperature range from -40 C up to 125 C. The HAL 700 is available in the SMD package SOT-89B. - distance of Hall plates: 2.35 mm - low sensitivity - typical BON: 14.9 mT at room temperature - typical BOFF: -14.9 mT at room temperature - temperature coefficient of -2000 ppm/K in all magnetic characteristics - switching offset compensation at typically 150 kHz - operation from 3.8 V to 24 V supply voltage - operation with static and dynamic magnetic fields up to 10 kHz - overvoltage protection at all pins - reverse-voltage protection at VDD-pin - robustness of magnetic characteristics against mechanical stress - short-circuit protected open-drain outputs by thermal shutdown - constant switching points over a wide supply voltage range - EMC corresponding to DIN 40839 1.2. Applications The HAL 700 is the ideal sensor for position-control applications with direction detection and alternating magnetic signals such as: - multipole magnet applications, - rotating speed and direction measurement, position tracking (active targets), and - window lifters. Micronas 3 HAL700 ADVANCE INFORMATION 1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. 1.6. Solderability All packages: according to IEC68-2-58 During soldering, reflow processing, and manual reworking, a component body temperature of 260 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity. 1 VDD 3 S1-Output Type Temperature Range K E 700E HAL 700 700K 1.3.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification test or as production parts. 2 S2-Output 4 GND 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.1. on page 10. Fig. 1-1: Pin configuration 1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: K, or E Package: SF for SOT-89B Type: 700 Example: HAL 700SF-K Type: 700 Package: SOT-89B Temperature Range: TJ = -40 C to +140 C Hall sensors are available in a wide variety of packaging quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". 4 Micronas ADVANCE INFORMATION HAL700 an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to -15 V. Clock 2. Functional Description The HAL 700 is a monolithic integrated circuit with two independent subblocks consisting each of a Hall plate and the corresponding comparator. Each subblock independently switches the comparator output in response to the magnetic field at the location of the corresponding sensitive area. If a magnetic field with flux lines perpendicular to the sensitive area is present, the biased Hall plate generates a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The subblocks are designed to have closely matched switching points. The output of comparator 1 attached to S1 controls the open drain output at Pin 3. Pin 2 is set according to the state of comparator 2 connected to S2. The temperature-dependent bias - common to both subblocks - increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the comparator switches to the appropriate state. The built-in hysteresis prevents oscillations of the outputs. In order to achieve good matching of the switching points of both subblocks, the magnetic offset caused by mechanical stress is compensated for by use of "switching offset compensation techniques". Therefore, an internal oscillator provides a two-phase clock to both subblocks. For each subblock, the Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Shunt protection devices clamp voltage peaks at the Output-pins and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by t BS1 BS1on t BS2 BS2on t Pin 2 VOH VOL t Pin 3 VOH VOL t IDD 1/fosc tf tf t Fig. 2-1: Timing diagram 1 VDD Reverse Voltage and Overvoltage Protection Temperature Dependent Bias Hysteresis Control Short Circuit and Overvoltage Protection Hall Plate 1 Comparator Switch S1 3 Output S1-Output Hall Plate 2 Comparator 2 Clock S2 Switch Output S2-Output 4 GND Fig. 2-2: HAL 700 block diagram Micronas 5 HAL700 3. Specifications 3.1. Outline Dimensions 4.55 0.15 0.3 1.7 4 y 4 0.2 min. 0.25 1 0.4 0.4 1.5 3.0 2 3 0.4 x1 x2 ADVANCE INFORMATION sensitive area S1 0.2 sensitive area S2 0.2 2.55 top view 1.15 branded side 0.06 0.04 SPGS0022-5-B4/1E Fig. 3-1: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm 3.2. Dimensions of Sensitive Areas Dimensions: 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT-89B x1+x2 x1=x2 y (2.350.001) mm 1.175 mm nominal 0.975 mm nominal Note: For all package diagrams, a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. 6 Micronas ADVANCE INFORMATION HAL700 3.4. Absolute Maximum Ratings Symbol VDD -VP -IDD IDDZ VO IO IOmax IOZ TS TJ 1) 2) 3) 4) 5) Parameter Supply Voltage Supply Voltage Reverse Supply Current Supply Current through Protection Device Output Voltage Continuous Output On Current Peak Output On Current Output Current through Protection Device Storage Temperature Range Junction Temperature Range Pin No. 1 1 1 1 2, 3 2, 3 2, 3 3 Min. -15 -242) - -1003) -0.3 - - -2003) -65 -40 -40 Max. 281) 281) 501) 1003) 281) 201) 1503) 2003) 1505) 1704) 150 Unit V V mA mA V mA mA mA C C C as long, as TJmax is not exceeded with a 220- series resistance at pin 1 corresponding to test circuit 1 t < 2 ms t < 1000 h Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity. Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability. 3.5. Recommended Operating Conditions Symbol VDD IO VO Parameter Supply Voltage Continuous Output Current Output Voltage (output switch off) Pin No. 1 3 3 Min. 3.8 0 0 Typ. - - - Max. 24 10 24 Unit V mA V Micronas 7 HAL700 3.6. Electrical Characteristics at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified in Conditions. Typical Characteristics for TJ = 25 C and VDD = 5 V. Symbol IDD IDD VDDZ VOZ VOL VOL Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Output Voltage Output Voltage over Temperature Range IOH IOH Output Leakage Current 2, 3 0.06 - 0.1 A A Pin No. 1 1 Min. 2 Typ. 5.5 7 Max. 9 10 Unit mA mA ADVANCE INFORMATION Conditions TJ = 25 C 1 28.5 32 V IDD = 25 mA, TJ = 25 C, t = 20 ms IOH = 25 mA, TJ = 25 C, t = 20 ms IOL = 10 mA, TJ = 25 C IOL = 10 mA, 2, 3 28 32 V 2, 3 2, 3 130 130 280 400 mV mV Output switched off, TJ = 25 C, VOH = 3.8 V to 24 V Output switched off, TJ 140 C, VOH = 3.8 V to 24 V TJ = 25 C Output Leakage Current over Temperature Range 2, 3 10 fosc fosc ten(O) Internal sampling frequency Internal sampling frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time Output FallTime Thermal Resistance Junction to Substrate Backside - - 130 100 150 150 - - kHz kHz s 50 100 VDD = 12 V, B>Bon + 2 mT or B 2, 3 2, 3 - - 1.2 0.2 150 1.6 200 s s K/W VDD = 12 V, RL= 20 k, CL= 20 pF VDD = 12 V, RL= 20 k, CL= 20 pF Fiberglass Substrate 30 mm x 10mm x 1.5mm, pad size see Fig. 3-2 5.0 2.0 2.0 1.0 Fig. 3-2: Recommended pad sizes for SOT-89B Dimensions in mm 8 Micronas ADVANCE INFORMATION HAL700 3.7.2. Matching of BS1 and BS2 (quasistationary: dB/dt<0.5mT/ms) at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified Typical Characteristics for TJ = 25 C and VDD = 5 V Parameter BS1on - BS2on Min. -7.5 -7.5 -7.5 -7.5 Typ 0 0 0 0 Max. 7.5 7.5 7.5 7.5 BS1off - BS2off Min. -7.5 -7.5 -7.5 -7.5 Typ 0 0 0 0 Max. 7.5 7.5 7.5 7.5 mT mT mT mT Unit 3.7. Magnetic Characteristics Output Voltage VO BHYS VOL BOFF 0 BON B Tj -40 C 25 C 100 C 140 C Fig. 3-3: Definition of magnetic switching points for the HAL 700 Positive flux density values refer to the magnetic south pole at the branded side of the package. 3.7.1. Magnetic Threshold (quasistationary: dB/dt<0.5 mT/ms) at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified Typical Characteristics for TJ = 25 C and VDD = 5 V Parameter Tj -40 C 25 C 100 C 140 C On point BS1on, BS2on Min. 12.5 10.7 tbd 6.0 Typ. 16.3 14.9 tbd 10.9 Max. 20 19.1 tbd 16.0 Off point BS1off,, BS2off Min. -20 -19.1 tbd -16.0 Typ. -16.3 -14.9 tbd -10.9 Max. -12.5 -10.7 tbd -6.0 mT mT mT mT Unit 3.7.3. Hysteresis Matching (quasistationary: dB/dt<0.5 mT/ms) at TJ = -40 C to +140 C, VDD = 3.8 V to 24V, as not otherwise specified Typical Characteristics for TJ = 25 C and VDD = 5 V Parameter Tj -40 C 25 C 100 C 140 C (BS1on - BS1off) / (BS2on - BS2off) Min. 0.85 0.85 0.85 0.85 Typ. 1.0 1.0 1.0 1.0 Max. 1.2 1.2 1.2 1.2 - - - - Unit Micronas 9 HAL700 4. Application Notes 4.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions, the following equation is valid: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T 4.2. Extended Operating Conditions All sensors fulfil the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7) 4.3. Start-up Behavior ADVANCE INFORMATION Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8) During initialization time, the output states are not defined and the outputs can toggle. After ten(O) both outputs will be either high or low for a stable magnetic field (no toggling). The outputs will be low if the applied magnetic flux density B exceeds BON and high if B drops below BOFF. For magnetic fields between BOFF and BON, the output states of the Hall sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic flux density must be above BONmax, respectively, below BOFFmin. 4.4. EMC and ESD For applications that cause disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 4-1). The series resistor and the capacitor should be placed as closely as possible to the Hall sensor. Please contact Micronas for detailed investigation reports with EMC and ESD results. Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V is not tested. For special test conditions, please contact Micronas. RV 220 1 VDD VEMC VP 4.7 nF 3 S1-Output 2 S2-Output 20 pF 20 pF RL 2.4 k RL 2.4 k 4 GND Fig. 4-1: Test circuit for EMC investigations 10 Micronas ADVANCE INFORMATION HAL700 Micronas 11 HAL700 5. Data Sheet History ADVANCE INFORMATION 1. Advance Information: "HAL700 Dual Hall-Effect Sensor with Independent Outputs", Feb. 20, 2001, 6251-477-1AI. First release of the advance information. Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-477-1AI All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. 12 Micronas |
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